2N7002W_14 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET

2N7002W
60V N-Channel Enhancement Mode MOSFET
FEATURES
• R_DS(ON), V_GS@10V,I_DS@500mA=5Ω
• R_DS(ON), V_GS@4.5V,I_DS@75mA=7.5Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
SOT-323
0.087(2.20)
0.070(1.80)
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
Unit：inch(mm)
0.006(0.15)
0.002(0.05)
MECHANICAL DATA
• Case: SOT-323 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight: 0.0002 ounces, 0.005 grams
• Marking : 72W
0.004(0.10)MAX.
0.044(1.10)
0.035(0.90)
0.016(0.40)
0.008(0.20)
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
Drain-Source Voltage
PA RA ME TE R
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{1 )}
Maximum Power Dissipation
O p e r a t i ng J unc t i o n a nd S t o r a g e Te m p e r a t ur e Ra ng e
Junction-to Ambient Thermal Resistance(PCB mounted)²
T_A =25^O C
T_A =75^O C
S ym b o l
V_{D S}
V_GS
I_D
I_{D M}
P_D
T_J ,T_{S TG}
R_{θJ A}
Limit
60
+20
115
800
200
120
-55 to + 150
625
Uni ts
V
V
mA
mA
mW
O_C
O _{C /W}
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
STAD-JUL.26.2007
PAGE . 1