2N7002W_05 Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
VOLTAGE 60 Volts ^POWER 200 mWatts ^SOT-323
Unit: inch (mm)
FEATURES
• N-channel enhancement mode field effect transistor,designed
for high speed pulse amplifier and drive application,which
ismanufactured by the N-channel DMOS process.
• High density cell design for low RDS(ON)
• Voltage controlled small signal switching.
• Rugged and reliabale.
• High saturation current capability.
• High-speed switching.CMOS logic compatible.
• CMOS logic compatible input.
• Not thermal runaway.
• No secondary breakdown.
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
.087(2.2)
.070(1.8)
.054(1.35)
.045(1.15)
.056(1.40)
.047(1.20)
.004(.10)MAX.
.006(.15)
.002(.05)
MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0048 gram
• Marking: 72W
ABSOLUTE RATINGS
.016(.40)
.078(.20)
PARAMETER
Drain-Source Voltagee
Drain-gate Voltagee
Gate-Source Voltage
Drain Current
To ta l P o we r D i s s i p a ti o n
Op e ra ti ng a nd S to ra g e Te m p e ra ture Ra ng e
Thermal Risistance,Junction-to-Ambient
S ym b o l
V _DSS
V _DRG
V _GSS
I_D
P_D
T_J, T_STG
R _{θJ A}
Value
60
60
20
115
200
-55 to + 150
625
Uni ts
V
V
V
mA
mW
O_C
O _{C /W}
Note 1: R_GS<20K Ω
2: FR-5 board 1.0x0.75x0.062 inch witg minmum recommended pad layout
STAD-DEC.07.2005
D
3
1
2
G
S
PAGE . 1