2N7002TB Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 60V N-CHANNEL ENHANCEMENT MODE MOSFET

2N7002TB
60V N-CHANNEL ENHANCEMENT MODE MOSFET
FEATURES
• R_DS(ON), V_GS@10V,I_DS@500mA=5Ω
• R_DS(ON), V_GS@4.5V,I_DS@50mA=7.5Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Battery Operated Systems, Solid-State
Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound as per IEC61249 Std..
(Halogen Free)
MECHANICAL DATA
• Case: SOT-523, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.00007 ounce, 0.002 gram
3
• Marking: 72
D
GS
1
2
Maximum Ratings and Thermal Characteristics (T_A=25^OC unless otherwise noted )
Drain-Source Voltage
PARAMETER
Gats-Source Voltage
Continous Drain Current
Pulsed Drain Current ⁽¹⁾
Maximum Power Dissipation
Junction-to Ambient Thermal Resistance (PCB mounted)²
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e
TA=25^oC
TA=75^oC
SYMBOL
VDS
VGS
ID
I DM
PD
RΘJA
TJ,TSTG
LIMIT
60
+20
115
800
150
90
833
-55 to 150
UNITS
V
V
mA
mA
mW
o_C/W
o_C
Note:1.Maximum DC current limited by the package
2.Surface mounted on FR4 board,t<10 sec
3.Pulse width<300us, Duty cycle<2%
May 13,2015-REV.02
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