2N7002KW_14 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET - ESD Protected

2N7002KW
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R , V @10V,I @500mA=3Ω
DS(ON) GS
DS
• R_DS(ON), V_GS@4.5V,I_DS@200mA=4Ω
SOT-323
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• /HDGIUHHLQFRPSO\ZLWK(85R+6(&GLUHFWLYHV
‡*UHHQPROGLQJFRPSRXQGDVSHU,(&6WG+DORJHQ)UHH
0.087(2.20)
0.070(1.80)
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
MECHANICAL DATA
• Case: SOT-323 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
‡$SSUR[:HLJKWRXQFHVJUDPV
• Marking : K72
0.004(0.10)MAX.
0.016(0.40)
0.008(0.20)
Unit：inch(mm)
0.006(0.15)
0.002(0.05)
0.044(1.10)
0.035(0.90)
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PA RA ME TE R
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Operating Junction and Storage
Te mp e r a tur e Ra ng e
Junction-to Ambient Thermal
Resistance(PCB mounted)²
S ym b o l
V _DS
V _GS
I_D
T_A= 2 5 ^OC
T_A= 7 5 ^OC
I_{D M}
P_D
T ,T
J STG
R_θJA
Limit
60
+20
11 5
800
200
120
-55 to + 150
625
Units
V
V
mA
mA
mW
O_C
O_{C /W}
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
May 21.2010-REV.01
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