2N7002KW_10 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET - ESD Protected

2N7002KW
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R , V @10V,I @500mA=3Ω
DS(ON) GS
DS
• R_DS(ON), V_GS@4.5V,I_DS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-323 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : K72
D
3
1
2
G
S
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PA RA ME TE R
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Operating Junction and Storage
Te mp e r a tur e Ra ng e
Junction-to Ambient Thermal
Resistance(PCB mounted)²
S ym b o l
V _DS
V _GS
I_D
T_A= 2 5 ^OC
T_A= 7 5 ^OC
I_{D M}
P_D
T ,T
J STG
R_θJA
Limit
60
+20
11 5
800
200
120
-55 to + 150
625
Units
V
V
mA
mA
mW
O_C
O_{C /W}
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
May 21.2010-REV.01
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