2N7002KTB_14 Datasheet, PDF (1/7 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET - ESD Protected

2N7002KTB
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R_DS(ON), V_GS@10V,I_DS@500mA=3
• R_DS(ON), V_GS@4.5V,I_DS@200mA=4
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case: SOT-523 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx. Weight: 0.00007 ounces, 0.002 grams
• Marking : 27
0.052(1.30)
0.043(1.10)
0.067(1.70)
0.059(1.50)
0.024(0.60)
0.019(0.50)
0.007(0.17)
0.002(0.07)
0.012(0.30)
0.004(0.10)
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PARA ME TE R
Symbol
Drain-Source Voltage
V _DS
Gate-Source Voltage
V _GS
Conti nuous D rai n C urrent
I_D
Pulsed Drain Current ¹⁾
Maxi mum P ower Di ssi pati on
T_A=2 5 ^OC
T_A=7 5 ^OC
Op e ra ti ng J uncti o n a nd S to ra g e Te m p er ature Ra ng e
I_{D M}
P_D
T_J,T_STG
Junction-to Ambient Thermal Resistance(PCB mounted)²
R_JA
Limit
60
+20
11 5
800
200
150
-55 to + 150
883
Uni ts
V
V
mA
mA
mW
O_C
O_{C /W}
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
July 20,2012-REV.02
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