2N7002KTB6 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET - ESD Protected

2N7002KTB6
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R , V @10V,I @500mA=3Ω
DS(ON) GS
DS
• R_DS(ON), V_GS@4.5V,I_DS@200mA=4Ω
SOT-563
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-563 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
654
• Marking : 27
12 3
Fig.56
Maximum RATINGS and Thermal Characteristics (T =25OC unless otherwise noted )
A
PA RA ME TE R
Drain-Source Voltage
Gate-Source Voltage
C ontinuous Drain Current
Pulsed Drain Current ¹⁾
Maxi mum P ower Di ssipati on
O p e r a ti ng J unc ti o n a nd S to r a g e Te m p e ra tur e
Range
Junction-to Ambient Thermal Resistance(PCB mounted)²
S ymbol
V _DS
V _GS
I_D
T_A= 2 5 ^OC
T_A= 7 5 ^OC
I_{D M}
P
D
T_J,T_STG
R_θJA
Limit
60
+20
115
800
200
150
-55 to + 150
883
Uni ts
V
V
mA
mA
mW
O_C
O_{C /W}
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
July 13.2010-REV.00
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