2N7002KDW_14 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET - ESD Protected

2N7002KDW
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R_DS(ON), V_GS@10V,I_DS@500mA=3Ω
• R_DS(ON), V_GS@4.5V,I_DS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
SOT-363
0.087(2.20)
0.074(1.90)
0.054(1.35)
0.045(1.15)
0.030(0.75)
0.021(0.55)
0.056(1.40)
0.047(1.20)
Unit：inch(mm)
0.010(0.25)
0.010(0.25)
0.003(0.08)
MECHANICAL DATA
• Case: SOT-363 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx. Weight: 0.0002 ounces, 0.006 grams
• Marking : K27
0.012(0.30)
0.005(0.15)
6
5
4
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
1
2
3
PA RA ME TE R
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed D rain C urrent ¹⁾
Maximum Power D issipation
Operating Junction and Storage
Te mp e r a tur e Ra ng e
Junction-to Ambient Thermal
Resistance(PCB mounted)²
T_A= 2 5 ^OC
T_A= 7 5 ^OC
S ym b o l
V_DS
V _GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
Limit
60
+20
115
800
200
120
-55 to + 150
625
Units
V
V
mA
mA
mW
O_C
O_{C /W}
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
May 21.2010-REV.01
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