2N7002KDW Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET - ESD Protected

2N7002KDW
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R_DS(ON), V_GS@10V,I_DS@500mA=3Ω
• R_DS(ON), V_GS@4.5V,I_DS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Component are in compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-363 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : K27
6
5
4
1
2
3
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
Drain-Source Voltage
PARAMETER
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
T_A =25^OC
T_A =75^OC
Junction-to Ambient Thermal Resistance(PCB mounted)²
S ym b o l
V
DS
V_GS
I_D
I_{D M}
P_D
T_J,T_{S TG}
R_{θJ A}
Limit
60
+20
115
800
200
120
-55 to + 150
625
Uni ts
V
V
mA
mA
mW
O_C
O _{C /W}
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JAN.11.2007
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