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2N7002KDW-AU Datasheet, PDF (1/7 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET - ESD Protected | |||
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2N7002KDW-AU
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
⢠RDS(ON), VGS@10V,IDS@500mA=3Ω
⢠RDS(ON), VGS@4.5V,IDS@200mA=4Ω
⢠Advanced Trench Process Technology
⢠High Density Cell Design For Ultra Low On-Resistance
⢠Very Low Leakage Current In Off Condition
⢠Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
⢠ESD Protected 2KV HBM
⢠Acqire quality system certificate : TS16949
⢠AEC-Q101 qualified
⢠Lead free in compliance with EU RoHS 2011/65/EU directive
⢠Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
⢠Case: SOT-363 Package
⢠Terminals: Solderable per MIL-STD-750,Method 2026
⢠Approx. Weight: 0.0002 ounces, 0.006 grams
⢠Marking: K27
Maximum RATINGS and Thermal Characteristics (T =25OC unless otherwise noted )
A
6
5
4
1
2
3
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous D rain C urrent
ID
Pulsed Drain Current 1)
Maximum Power Dissipation
Operating Junction and Storage
Temp er at ur e R a ng e
T A= 2 5 OC
T A= 7 5 OC
Junction-to Ambient Thermal Resistance
(PCB mounted)2
I DM
PD
TJ, TSTG
RθJA
Limit
60
+20
115
800
200
120
-55 to +150
625
Note:1.Maximum DC current limited by the package
2.Surface mounted on FR4 board, t<10 sec
3.Pulse width<300us, Duty cycle<2%
Uni t s
V
V
mA
mA
mW
OC
OC/W
May 13,2015-REV.03
PAGE . 1
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