2N7002FN3 Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – 60V N-CHANNEL ENHANCEMENT MODE MOSFET

2N7002FN3
60V N-CHANNEL ENHANCEMENT MODE MOSFET
FEATURES
• R_DS(ON), V_GS@10V,I_DS@500mA=5Ω
• R_DS(ON), V_GS@4.5V,I_DS@50mA=7.5Ω
DFN 3L
0.042(1.05)
0.037(0.95)
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Battery Operated Systems, Solid-State
Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• In compliance with EU RoHS 2002/95/EC directives
Unit : inch(mm)
0.002(0.05) MAX.
MECHANICAL DATA
• Case: DFN 3L, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Marking: AH
2
3
1
0.013(0.32)
0.008(0.22)
0.014(0.36)
0.013(0.32)
0.008(0.22)
Maximum Ratings and Thermal Characteristics (T =25OC unless otherwise noted )
A
Drain-Source Voltage
Gats-Source Voltage
Continous Drain Current
Pulsed Drain Current ⁽¹⁾
PARAMETER
Maximum Power Dissipation
Junction-to Ambient Thermal Resistance (PCB mounted)²
O p e ra t i ng J unc t i o n a nd S t o ra g e Te mp e r a tur e Ra ng e
SYMBOL
VDS
VGS
ID
I DM
PD
R_θJA
TJ,TSTG
LIMIT
60
+20
115
800
150
883
-55 to +150
UNITS
V
V
mA
mA
mW
o_C/W
o_C
Note 1 : Maximum DC current limited by the package
2 : Surface mounted on FR4 board,t<10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DSEIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
September 03.2010-REV.00
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