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2N7002DW_14 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET | |||
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2N7002DW
60V N-Channel Enhancement Mode MOSFET
FEATURES
⢠RDS(ON), VGS@10V,IDS@500mA=5â¦
⢠RDS(ON), VGS@4.5V,IDS@75mA=7.5â¦
⢠Advanced Trench Process Technology
⢠High Density Cell Design For Ultra Low On-Resistance
⢠Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
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MECHANICAL DATA
⢠Case: SOT-363 Package
⢠Terminals : Solderable per MIL-STD-750,Method 2026
⢠Apporx. Weight: 0.0002 ounces , 0.006grams
⢠Marking : 702
SOT-363
Unitï¼inch(mm)
0.087(2.20)
0.074(1.90)
0.010(0.25)
0.054(1.35)
0.045(1.15)
0.030(0.75)
0.021(0.55)
0.056(1.40)
0.047(1.20)
0.010(0.25)
0.003(0.08)
0.012(0.30)
0.005(0.15)
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
S ym b o l
Drain-Source Voltage
V DS
Gate-Source Voltage
V GS
Continuous Drain Current
ID
Pulsed Drain Current 1)
Maximum Power Dissipation
TA= 2 5 OC
TA= 7 5 OC
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture
Range
ID M
PD
TJ,TSTG
Junction-to Ambient Thermal Resistance(PCB mounted)2
R θJ A
Limit
60
+20
115
800
200
120
-55 to + 150
625
Uni ts
V
V
mA
mA
mW
OC
OC /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.0.0-AUG.4.2008
PAGE . 1
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