2N7002DW_08 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET

2N7002DW
60V N-Channel Enhancement Mode MOSFET
FEATURES
• R_DS(ON), V_GS@10V,I_DS@500mA=5Ω
• R_DS(ON), V_GS@4.5V,I_DS@75mA=7.5Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-363 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 702
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PARAMETER
S ym b o l
Drain-Source Voltage
V _DS
Gate-Source Voltage
V _GS
Continuous Drain Current
I_D
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
T_A= 2 5 ^OC
T_A= 7 5 ^OC
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e
Range
I_{D M}
P_D
T_J,T_STG
Junction-to Ambient Thermal Resistance(PCB mounted)²
R _{θJ A}
Limit
60
+20
115
800
200
120
-55 to + 150
625
Uni ts
V
V
mA
mA
mW
O_C
O_{C /W}
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.0.0-AUG.4.2008
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