2N7002DW_05 Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS

2N7002DW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS
This space-efficient device contains two electrically-isolated N-Channel
enhancement-mode MOSFETs. It comes in a very small SOT-363 (SC70-6L)
package. This device is ideal for portable applications where board space is
at a premium.
FEATURES
SOT- 363
4
5
Dual N-Channel MOSFETS in Ultra-Small SOT-363 Package
6
Low On-Resistance
Low Gate Threshold Voltage
Fast Switching
3
2
1
Available in lead-free plating (100% matte tin finish)
65 4
APPLICATIONS
Switching Power Supplies
Hand-Held Computers, PDAs
MARKING CODE: 702
1 23
MAXIMUM RATINGS
T_J = 25°C Unless otherwise noted
Rating
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current
Total Power Dissipation (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
Note 1. R_GS < 20K ohms
Symbol
V_DSS
V _DGR
V_GSS
I_D
P_D
T_J
T_stg
THERMAL CHARACTERISTICS
Value
60
60
20
115
200
-55 to 150
-55 to 150
Characteristic
Thermal Resistance, Junction to Ambient (Note 2)
Symbol
R _thja
Value
625
Note 2. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout
Units
V
V
V
mA
mW
°C
°C
Units
°C/W
8/11/2005
Page 1
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