2N7002 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
VOLTAGE 60 Volts
CURRENT 115 mAmp
PACKAGE
DESCRIPTION
• N-channel enhancement mode field effect transistor, designed for high speed pulsed
amplifier and driver applications, which is manufactored by the N-Channel DMOS
process.
FEATURES
• High density cell design for low RDS(ON).
• Voltage controlled small signal switching.
• Rugged and reliable.
• High saturation current capability.
• High-speed switcing.
• CMOS logic compatible input.
• Not thermal runaway.
• No secondary breakdown.
SOT-23
D
ABSOLUTE MAXIMUM RATINGS
TA = 25^OC Unless otherwise noted.
Drain-Source Voltage
Parameter
Drain-Gate Voltage (Rgs _≤ 1MΩ)
Gate Source Voltage -Continuous
-No Repetitive (tp<50µs)
Maximum Drain Current -Continuous
-Pulsed
Maximum POwer Dissipation Derated Above 25^OC
Operation and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Symbol
V DSS
VDRG
V GSS
ID
PD
TJ , TSTG
RθJA
G
S
2N7002
60
60
± ²⁰
± ²⁰
115
800
200
-55 to +150
625
Units
V
V
V
mA
mW
mW / ^OC
O_{C / W}
Part Number: 2N7002
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