1SS388_16 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – SILICON EPITAXIAL SCHOTTKY BARRIER TYPE

1SS388
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE
FEATURES
• Low forward voltage : VF(3)=0.54V(typ.)
• Low reverse current : IR=5μA(typ.)
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound as per IEC61249 Std. . (Halogen Free)
APPLICATIONS
• Case : SOD-523 plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx Weight : 0.00005 ounces, 0.0014 grams
• Marking : 38
1
Cathode
2
Anode
0.034(0.85)
0.029(0.75)
0.050(1.25)
0.045(1.15)
0.014(0.35)
0.009(0.25)
0.026(0.65)
0.021(0.55)
0.067(1.70)
0.059(1.50)
0.006(0.15)
0.002(0.05)
0.20 MIN.
MAXIMUM RATINGS (TA=25^oC)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
O p e r a t ing J unc t io n a nd St o r a g e Te mp e r a t ur e Ra ng e
Symbol
Rating
Unit
VRM
45
V
VR
40
V
I FM
300
mA
IO
100
mA
I FSM
1
A
P*
150
mW
T J, T STG
-55 to +125
O_C
ELECTRICAL CHARACTERISTICS (TA=25^oC)
Characteristic
Forward Voltage
Reverse Current
Junction Capacitance
Symbol
Test Condition
Min.
Typ.
Max.
Unit
VF(1)
I F=1mA
-
0.28
-
VF(2)
I F=10mA
-
0.36
-
V
VF(3)
I F=50mA
-
0.54
0.60
IR
VR=10V
-
-
5
μA
CJ
VR=0,f=1MHz
-
18
25
pF
May 31,2016­REV.04
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