1SS388 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (HGH SPEED SWITCHING APPLICATION)

1SS388
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE
FEATURES
• Low forward voltage : VF(3)=0.54V(typ.)
• Low reverse current : IR=5µA(typ.)
• In compliance with EU RoHS 2002/95/EC directives
APPLICATIONS
• Case: SOD-523 plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx Weight: 0.0014 grams
.• Marking : 38
Polarity : Color band cathode
MAXIMUM RATINGS (TA=25^oC)
1
Cathode
2
Anode
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e
Symbol
VRM
VR
I FM
IO
I FSM
P*
TJ,TSTG
Rating
45
40
300
100
1
150
-55 to +125
ELECTRICAL CHARACTERISTICS (TA=25^oC)
Characteristic
Forward Voltage
Reverse Current
Junction Capacitance
Symbol
Test Condition
Min.
VF(1)
I F=1mA
-
VF(2)
I F=10mA
-
VF(3)
I F=50mA
-
IR
VR=10V
-
CJ
VR=0,f=1MHz
-
Typ.
0.28
0.36
0.54
-
18
Max.
-
-
0.60
5
25
Unit
V
V
mA
mA
A
mW
O_C
Unit
V
µA
pF
REV.0.1-FEB.25.2009
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