1SMB3EZ6.8_09 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – GLASS PASSIVATED JUNCTION SILICON ZENER DIODES

1SMB3EZ6.8~1SMB3EZ51
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
VOLTAGE 6.8 to 51 Volts POWER
3.0 Watts
FEATURES
• Low profile package
• Built-in strain relief
• Glass passivated iunction
• Low inductance
• Typical I_D less than 1.0µA above 11V
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• High temperature soldering : 260°C /10 seconds at terminals
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: JEDEC DO-214AA, Molded plastic over passivated junction
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: Indicated by cathode band
• Standard packing: 12mm tape (E1A-481)
• Weight: 0.0032 ounce, 0.092 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Peak Pulse Power Dissipation on T_L=50 ^OC (Notes A)
Derate above 50 ^OC
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating Junction and Storage Temperature Range
Symbol
PD
IFSM
TJ,TSTG
Value
3.0
15
-55 to + 150
Units
W atts
Amps
O_C
NOTES:
A.Mounted on 5.0mm² (.013mm thick) land areas.
B.Measured on 8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum
STAD-MAR.25.2009
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