1SMB2EZ6.8 Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – GLASS PASSIVATED JUNCTION SILICON ZENER DIODES

1SMB2EZ6.8~1SMB2EZ100
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
VOLTAGE 6.8 to 100 Volts POWER
2.0 Watts
SMB/DO-214AA
FEATURES
• Low profile package
• Built-in strain relief
Unit: inch (mm)
• Low inductance
• Typical I_D less than 1.0µA above 11V
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• High temperature soldering : 260°C /10 seconds at terminals
• Pb free product are available : 99% Sn can meet RoHS environment
substance directive request
.185(4.70)
.160(4.06)
.012(.305)
.006(.152)
MECHANICAL DATA
Case: JEDEC DO-214AA, Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
Polarity: Indicated by cathode band
Standard packing: 12mm tape (E1A-481)
Weight: 0.003 ounce, 0.093 gram
.050(1.27)
.030(0.76)
.008(.203)
.002(.051)
.220(5.59)
.200(5.08)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Peak Pulse Power Dissipation on TA=50^OC (Notes A)
Derate above 70^OC
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating Junction and Storage Temperature Range
Symbol
PD
IFSM
TJ,TSTG
Value
2.0
24.0
15
-55 to + 150
Units
W atts
mW/ ^OC
Amps
O_C
NOTES:
A.Mounted on 5.0mm² (.013mm thick) land areas.
B.Measured on 8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum
STAD-JUL.16.2005
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