1N914 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diode

1N914
SWITCHING DIODES
VOLTAGE 100 Volts POWER
500 mWatts
FEATURES
• Fast switching Speed.
• Electrically ldentical to Standerd JEDEC
• High Conductance
• Axial lead Package ldeally Suited for Automatic lnsertion.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: Molded Glass DO-35
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.012 grams
• Mounting Position: Any
• Packing information
B - 2K per Bulk box
T/R - 10K per 13" plastic Reel
T/B - 5K per horiz. tape & Ammo box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted)
PARAMETER
Reverse Voltage
Peak Reverse Voltage
RMS Voltage
Maximum Average Forward Current at T_A=25^OC And f > 50Hz
Surge Forward Current at t < 1s and T_J=25 ^OC
Power Dissipation at Tamb= 25 ^OC
Maximum Forward Voltage at I_F =10mA
Maximum Leakage Current
at V_R=20V
at V_R=75V
at
V =20V
R
,TJ=
150
O_C
Maximum Capacitance (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance
Junction Temperature and Storage Temperature Range
SYMBOL
V
R
V_RM
V_RMS
I_F(AV)
I_FSM
P_TOT
V_F
I_R
C_J
t_rr
R_θJA
T_J,T_s
NOTE:
1. CJ at VR=0, f=1MHZ
2. From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω
STAD-FEB.06.2009
1N914
75
100
50
75
500
500
1.0
25
5
50
4
4
350
-65 to +175
UNITS
V
V
V
mA
mA
mW
V
nA
µA
µA
pF
ns
O_{C / W}
O_C
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