1N4150 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes"

1N4150
FAST SWITCHING SURFACE MOUNT DIODES
VOLTAGE 50 Volts
POWER 500 mWatts
FEATURES
• Fast switching Speed.
• Surface Mount Package Ideally Suited For Automatic Insertion.
• Silicon Epitaxal Planar Construction.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: Mini Melf, Glass
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.13 grams
• Mounting Position: Any
• Ordering information: Suffix : “ -35 ” to order DO-35 Package
• Packing information
B - 2K per Bulk box
T/R - 10K per 13" plastic Reel
T/B - 5K per horiz. tape & Ammo box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted)
PARAMETER
Reverse Voltage
Peak Reverse Voltage
RMS Voltage
Maximum Average Forward Current at T_A=25^OC And f > 50Hz
Surge Forward Current at t < 1s and T_J=25 ^OC
Power Dissipation at Tamb= 25 ^OC
Maximum Forward Voltage at I =200mA
F
Maximum Leakage Current at V_R= 50V
Maximum Capacitance (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typcal Thermal Resistance
Junction Temperature and Storage Temperature Range
SYMBOL
V_R
V_RM
V_{R M S}
I_{F (AV )}
I_{F S M}
P_{TO T}
V
F
I_R
C_J
t_rr
R_{θJ A}
T_J ,T_S
NOTE:
1. CJ at VR=0, f=1MHZ
2. From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω
STAD-FEB.06.2009
1N4150
50
50
35
200
500
500
1.0
0.1
4
4
350
-65 to +175
UNITS
V
V
V
mA
mA
mW
V
µA
pF
ns
O_{C / W}
O_C
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