NN30295A Datasheet, PDF (2/27 Pages) Panasonic Battery Group – DC-DC Step down Regulator comprising of Controller IC and Power MOSFET with I2C Interface

NN30295A
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Supply voltage
Operating free-air temperature
Operating junction temperature
Storage temperature
Input Voltage Range
V_IN
VDD
T_opr
T_j
T_stg
EN,VFB,VOUT
SCL,SDA
Output Voltage Range
ESD
LX,PGOOD
HBM (Human Body Model)
Rating
6.0
3.6
– 40 to + 85
– 40 to + 150
– 55 to + 150
-0.3 to ( V_IN + 0.3 )
-0.3 to ( VDD + 0.3 )
-0.3 to ( V_IN + 0.3 )
2
Unit Notes
V
*1
V
*1
°C
*2
°C
*2
°C
*2
V *1, *3
V *1, *3
V *1, *3
kV
—
Notes) Do not apply external currents and voltages to any pin not specifically mentioned.
This product may sustain permanent damage if subjected to conditions higher than the above stated absolute maximum rating.
This rating is the maximum rating and device operating at this range is not guaranteeable as it is higher than our stated
recommended operating range. When subjected under the absolute maximum rating for a long time, the reliability of the product
may be affected.
*1:The values under the condition not exceeding the above absolute maximum ratings and the power dissipation.
V_IN is voltage for AVIN, PVIN. VDD is voltage for VDD.
*2:Except for the power dissipation, operating ambient temperature, and storage temperature, all ratings are for Ta = 25 °C.
*3:( V_IN + 0.3 ) V must not exceed 6 V. (VDD + 0.3) V must not be exceeded 3.6 V.
■ POWER DISSIPATION RATING
PACKAGE
24 pin Plastic Quad Flat Non-leaded Package
Heat Slug Down (QFN Type)
θ_JA
61.6 °C / W
PD ( Ta = 25 °C)
2.03 W
PD ( Ta = 85 °C ) Notes
1.06 W
*1
Note). For the actual usage, please refer to the PD-Ta characteristics diagram in the package specification, follow the power supply
voltage, load and ambient temperature conditions to ensure that there is enough margin and the thermal design does not
exceed the allowable value.
*1:Glass Epoxy Substrate ( 4 Layers ) [ Glass-Epoxy: 50 X 50 X 0.8 t ( mm ) ], Die Pad Exposed , Soldered.
CAUTION
Although this has limited built-in ESD protection circuit, but permanent damage may occur on it.
Therefore, proper ESD precautions are recommended to avoid electrostatic damage to the MOS gates
2
Ver. BEB