DB5H411K Datasheet, PDF (1/4 Pages) Panasonic Battery Group – DB5H411K0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)

DB5H411K
Silicon epitaxial planar type
For high frequency amplification
DB2J411 in WSMini5 type package
Unit: mm
 Features
 Low forward voltage V_F and small reverse current I_R
 Short reverse recovery time t_rr
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
 Marking Symbol: 3F
 Basic Part Number
Dual DB2J411 (Parallel)
 Packaging
DB5H411K0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Reverse voltage
V_R
40
V
Single
1
A
Forward current (Average)
I_F(AV)
Double
0.75
A
Non-repetitive peak forward ^Single
3
A
surge current ^*1
I_FSM
Double
2.25
A
Junction temperature
Storage temperature
T_j
125
°C
T_stg –55 to +125 °C
Note) _*1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
1: Anode-1
2: N.C.
3: Anode-2
Panasonic
JEITA
Code
4: Cathode-2
5: Cathode-1
WSMini5-F1-B
SC-113CA

5
4
123
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
V_F I_F = 1 A
0.50 0.58
V
Reverse current
I_R V_R = 40 V
15
100
µA
Terminal capacitance
Reverse recovery time ^*1
C_t V_R = 10 V, f = 1 MHz
t_rr I_F = I_R = 100 mA, I_rr = 10 mA
21
pF
6.8
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *1: t_rr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
Publication date: January 2013
Ver. BED
1