DB2130200L Datasheet, PDF (1/5 Pages) Panasonic Battery Group – Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)

Doc No. TT4-EA-12791
Revision. 2
DB2130200L
Silicon epitaxial planar type
For rectification
 Features
 Low forward voltage VF
 Forward current (Average) IF(AV) = 1 A rectification is possible
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
 Marking Symbol: B3
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Rating
Reverse voltage
VR
30
Maximum peak reverse voltage
VRM
30
Forward current (Average)^*1
IF(AV)
1
Non-repetitive peak forward surge current ^*2 IFSM
20
Junction temperature
Tj
125
Operating ambient temperature
Topr -40 to +85
Storage temperature
Tstg -55 to +125
Note: *1 For embedded alumina substrate (substrate size:5 cm × 5 cm)
*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Unit
V
V
A
A
°C
°C
°C
Product Standards
Schottky Barrier Diode
DB2130200L
1.25
0.6
2
Unit: mm
0.12
1
0.8
0.55
1. Cathode
2. Anode
Panasonic
JEITA
Code
SMini2-F4-B-B
SC-108A
―
Internal Connection
2
1
Established : 2010-12-03
Revised : 2013-04-19
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