CNB1011_06 Datasheet, PDF (1/3 Pages) Panasonic Battery Group – Reflective photosensor

Reflective Photosensors (Photo Reflectors)
CNB1011
Reflective photosensor
I Features
• Ultraminiature, thin type: 2.29 mm × 2.9 mm (height: 0.88 mm)
1
4
C0.3
Unit: mm
I Applications
• Non-contact point SW, object sensing
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Input (Light Reverse voltage (DC)
V_R
6
V
emitting diode) Forward current (DC)
I_F
Power dissipation ^*1
P_D
30
mA
75
mW
Output (Photo Collector current
I_C
20
mA
transistor) Collector to emitter voltage V_CEO
35
V
Emitter to collector voltage V_ECO
6
V
Collector power dissipation ^*2 P_C
75
mW
Temperature Operating ambient temperature T_opr −25 to +85 °C
Storage temperature
T_stg −40 to +100 °C
Note) *1: Input power derating ratio is 1.0 mW/°C at T_a ≥ 25°C.
*2: Output power derating ratio is 1.0 mW/°C at Ta ≥ 25°C.
2
0.577
3
0.748
1.285
1.325
2.9±0 1
0.75 max.
0.75 max.
2.29±0 1
1.45
4-0.5
1.7
1.7
5.69±0 3
1: Anode
2: Cathode
0.7
3: Emitter
1.4
4: Collector
(Note) Tolerance unless otherwise specified is ±0.2
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Input Forward voltage (DC)
V_F
characteristics Reverse current (DC)
I_R
Output
Collector cutoff current
I_CEO
characteristics
Transfer Collector current ^*1
I_C
characteristics Leakage current
I_D
Collector to emitter saturation voltage V_CE(sat)
Response time ^*2
t_r
t_f
I_F = 4 mA
V_R = 3 V
V_CE = 20 V
V_CE = 2 V, I_F = 4 mA, d = 1 mm
V_CE = 2 V, I_F = 4 mA
I_F = 20 mA, I_C = 0.1 mA
V_CC = 2 V, I_C = 0.1 mA
R_L = 1 000 Ω
Note)
*1: Output current (IC) measurement
method (see figure below)
Glass plate
evaporated Al
d = 1 mm
*2: Response time measurement
circuit (see figure below)
Glass plate
evaporated Al
d = 1 mm
t_r: Rise time
t_f: Fall time
Sig. in
I_F
R_L
I_{C Sig. in}
V_CC
50 Ω
R_L
Input and output are handled electrically
This product is not designed to withstand radiation
Sig.
out _VCC
Sig. out
t_r
Min Typ Max Unit
1.15 1.3 V
10 µA
100 nA
40
243 µA
100 nA
0.4 V
40
µs
50
90%
10%
t_f
Publication date: October 2001
SHG00056AED
1