2SK3892 Datasheet, PDF (1/4 Pages) Panasonic Battery Group – Silicon N-channel power MOSFET

Power MOSFETs
This product complies with the RoHS Directive (EU 2002/95/EC).
2SK3892
Silicon N-channel power MOSFET
For contactless relay, diving circuit for a solenoid,
driving circuit for a motor, control equipment and
switching power supply
 Package
 Code
 Features
TO-220D-A1
 Gate-source surrender voltage V_GSS : ± 30 guaranteed
/ _{ Avalanche energy capacity guaranteed: EAS > 986 mJ}
 Pin Name
1: Gate
 High-speed switching: t_f = 39 ns
2: Drain
e _{e.  Absolute Maximum Ratings TC = 25°C}
c _{tag Parameter}
Symbol Rating
Unit
n ^d le ^s _{Drain-source surrender voltage}
a ^e lifecyc ^{Gate-source surrender voltage}
V_DSS
200
V
V_GSS
±30
V
t _{Drain current}
I_D
22
A
n ^{u duc Peak drain current}
Pro _{Avalanche energy capability} ^*
I_DP
88
A
EAS
986
mJ
te ^{tin four 40}
W
ing _type ^{n. Drain power dissipation}
T_a = 25°C
P_D
2.0
W
in ^{n llow ce atio Junctiontemperature}
T_j
150
°C
es ^fo tenan ^{type typed form / Storage temperature}
T_stg –55 to +150 °C
a ^{o lud in ce d t in /en Note) *: L = 2.67 mH, IL = 22 A, VDD = 50 V, 1 pulse}
3: Source
 Marking Symbol: K3892
 Internal Connection
D
G
S
M _isctinued ^{ipnlcanedmmaaintedniasnconttiinnuueed tybpoeut lateosnic.co.jp  Electrical Characteristics TC = 25°C±3°C}
on ^{d n a as Parameter}
Symbol
Conditions
isc _lane ^{isco URL .pan Drain-source surrender voltage}
e/D ^{p d ing icon Drain-source cutoff current}
D_{anc llow em Gate-source cutoff current}
V_DSS
I_DSS
I_GSS
I_D = 1 mA, V_GS = 0
V_DS = 160 V, V_GS = 0
V_GS = ±30 V, V_DS = 0
inten ^{it fo w.s Gate threshold voltage}
V_th V_DS = 10 V, I_D = 1.0 mA
Ma e ^{vis ://ww Drain-source ON resistance}
as ttp ^{Forward transfer admittance}
Ple ^h Short-circuit input capacitance
R_DS(on) V_GS = 10 V, I_D = 11.0 A
Y_fs V_DS = 10 V, I_D = 11.0 A
Min Typ Max
200
10
±1.0
2.5
4.5
48
62
7
15
Unit
V
mA
mA
V
mW
S
(Common source)
C_iss
3 177
pF
Short-circuit output capacitance
(Common source)
C_oss V_DS = 25 V, V_GS = 0, f = 1 MHz
456
pF
Reverse transfer capacitance
(Common source)
C_rss
41
pF
Turn-on delay time
t_d(on)
54
ns
Rise time
Turn-off delay time
t_r
V_DD = 100 V, I_D = 11.0 A
t_d(off) ^RL ^{= 9.1 W, V}GS ^{= 10 V}
60
ns
194
ns
Fall time
t_f
39
ns
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2009
SJG00043BED
1