2SC3938GQL Datasheet, PDF (1/4 Pages) Panasonic Battery Group – Silicon NPN epitaxial planar type

Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3938G
Silicon NPN epitaxial planar type
For high-speed switching
■ Features
/ _{• Low collector-emitter saturation voltage VCE(sat)}
• S-Mini type package, allowing downsizing of the equipment and
e _{automatic insertion through the tape packing}
c _{tage. ■ Absolute Maximum Ratings Ta = 25°C}
n ^{d le s Parameter}
Symbol Rating
Unit
yc _{Collector-base voltage (Emitter open) VCBO}
40
V
a ^{e lifec Collector-emitter voltage (E-B short) VCES}
40
V
t _{Emitter-base voltage (Collector open) VEBO}
5
V
n ^{u duc Collector current}
I_C
100
mA
ro _{Peak collector current}
I_CP
300
mA
te ^{tin r P Collector power dissipation}
P_C
150
mW
fou ^. Junction temperature
T_j
150
°C
ing type ^{tion Storage temperature}
T_stg −55 to +150 °C
■ Package
• Code
SMini3-F2
• Marking Symbol: 2Y
• Pin Name
1. Base
2. Emitter
3. Collector
ain ^{onludes faoilnlotewnanncceetyupeed typpeed test info.rjpm/ean/ ■ Electrical Characteristics Ta = 25°C ± 3°C}
o _Parameter
Symbol
Conditions
Min Typ Max Unit
c ^inc d ^m tena ^{ntin d ty t la ic.c Collector-base cutoff current (Emitter open) ICBO VCB = 40 V, IE = 0}
ed ne ^{in co ue ou on Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0}
M is ^{tinu pla ma dis tin ab as Forward current transfer ratio *}
h_FE V_CE = 1 V, I_C = 10 mA
60
iscon ^{laned iscon URL .pan Collector-emitter saturation voltage}
V_CE(sat) I_C = 10 mA, I_B = 1 mA
n _{Base-emitter saturation voltage}
V_BE(sat) I_C = 10 mA, I_B = 1 mA
/D ^{p d ing ico Transition frequency}
f_T
V_CB = 10 V, I_E = −10 mA, f = 200 MHz
D _{nce llow} em Collector output capacitance
a ^{fo .s (Common base, input open circuited)}
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
0.1
0.1
200
0.17 0.25
1
450
2
6
µA
µA

V
V
MHz
pF
n _it ^w _{Turn-on time}
ainte e ^{vis ://ww Turn-off time}
M _as ttp ^{Storage time}
t_on Refer to the measurement circuit
t_off
t_stg
17
ns
17
ns
10
ns
Ple ^{h Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.}
2. *: Rank classification
Rank
Q
R
h_FE
60 to 120
90 to 200
Publication date: April 2007
SJC00364AED
1