2SB0709ARL Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0709A (2SB709A)
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD0601A (2SD601A)
/ _{■ Features}
• High forward current transfer ratio h_FE
e _{. • Mini type package, allowing downsizing of the equipment and}
ge automatic insertion through the tape packing and the magazine
c _{ta packing.}
n ^dycle ^s ■ Absolute Maximum Ratings T_a = 25°C
a ^{e lifec Parameter}
Symbol Rating
Unit
t _{Collector-base voltage (Emitter open) VCBO}
−45
V
n ^{u duc Collector-emitter voltage (Base open) VCEO}
−45
V
ro _{Emitter-base voltage (Collector open) VEBO}
−7
V
te ^{tin r P Collectorcurrent}
I_C
−100
mA
fou ^. Peak collector current
I_CP
−200
mA
ing type ^{tion Collector power dissipation}
P_C
200
mW
w e ^a _{Junction temperature}
T_j
150
°C
in ^{n follo anc pe ped form / Storage temperature}
T_stg −55 to +150 °C
0.40^{+–00..0150}
3
Unit: mm
0.16^{+–00..0160}
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10˚
Marking Symbol: B
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
a ^{o ludes ainten nce tyued type test ino.jp/en ■ Electrical Characteristics Ta = 25°C ± 3°C}
c ^inc d ^m tena ^{ntin d ty t la ic.c Parameter}
Symbol
Conditions
Min
ed ne ^{in co ue ou on Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0}
−45
M is ^{tinu pla ma dis tin ab as Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0}
−45
iscon ^{laned iscon URL .pan Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0}
−7
n _{Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0}
/D ^{p d ing ico Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0}
D _{nce llow} em _{Forward current transfer ratio} *
h_FE V_CE = −10 V, I_C = −2 mA
160
a ^{fo .s} Collector-emitter saturation voltage
V_CE(sat) I_C = −100 mA, I_B = −10 mA
ten isit ^{ww Transition frequency}
f_T
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
ain e ^{v ://w Collector output capacitance}
M _as ttp ^{(Common base, input open circuited)}
C_ob V_CB = −10 V, I_E = 0, f = 1 MHz
Typ Max
− 0.3
80
2.7
− 0.1
−100
460
− 0.5
Unit
V
V
V
µA
µA

V
MHz
pF
Ple ^{h Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.}
2. _*: Rank classification
Rank
Q
R
S
No-rank
h_FE
160 to 260
Marking symbol
BQ
210 to 340
BR
290 to 460
BS
160 to 460
B
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2003
Note) The part number in the parenthesis shows conventional part number.
SJD00047BED
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