ERZ-V10D391 Datasheet, PDF (9/20 Pages) Panasonic Semiconductor – ZNR Transient/Surge Absorbers

“ZNR” Transient/Surge Absorbers (Type D)
■Typical Characteristics
Voltage vs. Current
Impulse Derating (Relation between impulse
width and impulse current multiple)
ERZV07D180 to ERZV07D680
400
Max.
Leakage Current
300
200
100
90
80
70
60
50
680
40
560
30
433793000
20
270
220
180
10
9
8
7
6
5
4
3
10^–6 10^–5
10^–4
10^–3
Max. Clamping Voltage
680
560
470
390
330
270
220
180
Test current waveform
10^–6 to 10^–3 A: Direct current
10^–1 to 10³ A: 8/20 μs
10^–2 10^–1 10⁰ 10¹ 10² 10³ 10⁴ 10⁵
Current (A)
ERZV07D180 to ERZV07D680
1000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 10⁶ times :10 sec. interval
100
10 ^110101040T63^{TiT5miTimmeimesesess}
1
0.1
20
100
1000
Impulse Width (μs)
10000
ERZV07D820 to ERZV07D511
2000
.BY
-FBLBHF
$VSSFOU
471
1000
431
900
391
800
361
700
600
500
400
511
300
200
271
241
210511
100
121
90
80
101
70
60
820
50
40
331
221
30
10^-6 10^-5 10^-4 10^-3
.BY
$MBNQJOH
7PMUBHF
511
471
431
391
361
331
271
241
221
201
151
121
101
820
10^-2 10^-1 10⁰
Current (A)
Test Current Waveform
10^-6 to 10^-3 A: Direct Current
10^-1 to 10⁴ A: 8/20 μs
10¹ 10² 10³ 10⁴ 10⁵
ERZV07D820 to ERZV07D511
10000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 10⁶ times :10 sec. interval
1000
100
10 _5Times
10
10 _6Times
1
20
100
1000
10000
Impulse Width (μs)
Design and specifications are each subject to change without notice. Ask factory for the current technical specifications before purchase and/or use.
Should a safety concern arise regarding this product, please be sure to contact us immediately.
01 Aug. 2012
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