ERZ-VA9V511 Datasheet, PDF (7/20 Pages) Panasonic Semiconductor – “ZNR” Transient/Surge Absorbers

“ZNR” Transient/Surge Absorbers (Type D)
■ Typical Characteristics
Voltage vs. Current
Impulse Derating (Relation between impulse
width and impulse current multiple)
ERZV05D180 to ERZV05D680
Max.
Max. Clamping Voltage
400 Leakage Current
680
300
560
470
200
390
330
270
390
100
220
90
180
80
70
60
50
680
40
546700
30
330
20
272020
180
ERZV05D180 to ERZV05D680
1000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 10⁶ times :10 sec. interval
100
101011_{600T154i0mTTii3emmTsieemsses}
10 _2Times
10
9
Test current waveform
1
8
10^–6 to 10^–4 A: Direct current
7
10^–1 to 10³ A: 8/20 μs
6
5
4
3 _{10–6 10–5}
10^–4
10^–3
10–²
10^–1
10⁰ 10¹ 10²
10³
10⁴
10⁵
Current (A)
0.210
100
1000
Impulse Width (μs)
10000
ERZV05D820 to ERZV05D471
.BY
2000 _{-FBLBHF
$VSSFOU}
.BY
$MBNQJOH
7PMUBHF
471

431

391
1000 _
361
900
331
800
271
700
241
600
221
201
500
151
400
471
121
300
101
271
820
200
241
125011
100
121
90
80
101
70
60
820
50
331
40 221
Test Current Waveform
10^-6 to 10^-4 A: Direct Current
10^-1 to 10³ A: 8/20 μs
30
10^-6
10^-5 10^-4 10^-3 10^-2 10^-1
10⁰
10¹
10²
10³
10⁴
Current (A)
ERZV05D820 to ERZV05D471
1000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 10⁶ times : 10 sec. interval
100
10 ^{111000435TTTiimmimeeesss}
10 _6Times
1
0.1
10⁵
20
100
1000
Impulse Width (μs)
10000
Design and specifications are each subject to change without notice. Ask factory for the current technical specifications before purchase and/or use.
Should a safety concern arise regarding this product, please be sure to contact us immediately.
01 Aug. 2012
– 10 –