XP1C301 Datasheet, PDF (5/5 Pages) Panasonic Semiconductor – Silicon PNP(NPN) epitaxial planer transistor

Composite Transistors
240
VCE=10V
Ta=25˚C
200
I_C — I_B
160
120
80
40
0
0 200 400 600 800 1000
Base current IB (µA)
f_T — I_E
300
VCB=10V
Ta=25˚C
240
180
120
60
0
–0.1 –0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
V_CE(sat) — I_C
100
IC/IB=10
30
10
3
1
0.3
25˚C
0.1
Ta=75˚C
0.03
– 25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
NV — I_C
240
VCE=10V
GV=80dB
200 ^{Function=FLAT}
Ta=25˚C
160
120
Rg=100kΩ
80
22kΩ
40
4.7kΩ
0
10 20 30 50 100 200 300 500 1000
Collector current IC (µA)
XP1C301
h_FE — I_C
600
VCE=10V
500
400
Ta=75˚C
25˚C
300
– 25˚C
200
100
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
5