UN2121 Datasheet, PDF (5/6 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
Characteristics charts of UN2124
– 300
I_C — V_CE
Ta=25˚C
– 250
– 200
–150
–100
– 50
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
V_CE(sat) — I_C
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
h_FE — I_C
400
VCE= –10V
350
300
250
Ta=75˚C
200
25˚C
150
– 25˚C
100
50
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
C_ob — V_CB
24
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
4
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
– 3000
–1000
I_O — V_IN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
–0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Input voltage VIN (V)
–100
– 30
–10
V_IN — I_O
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN212X
– 240
I_C — V_CE
Ta=25˚C
– 200
–160
–120
– 80
IB= –1.6mA
–1.4mA
–1.2mA
–1.0mA
– 0.8mA
– 0.6mA
– 40
– 0.4mA
– 0.2mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
V_CE(sat) — I_C
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
– 25˚C
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
h_FE — I_C
240
VCE= –10V
200
160
Ta=75˚C
120
25˚C
80
– 25˚C
40
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
5