AN8839NSB Datasheet, PDF (5/7 Pages) Panasonic Semiconductor – CD-DA head amplifier IC for 3-beam system optical pick-up

ICs for Compact Disc/CD-ROM Player
AN8839NSB
s Electrical Characteristics at T_a = 25°C (continude)
Parameter
Symbol
Conditions
Min Typ Max Unit
RF amplification
RF amp. offset voltage
RF amp. transfer gain
RF-amp.
frequency characteristics ^*
V_RF-OF
G_RF
G_RFF
V_CC = 3 V
V_CC = 3 V
V_CC = 3 V
f = 500 kHz, 3 MHz
−910 −710 −510 mV
7.7 9.3 10.9 dB
−2.8 − 0.6 1.6 dB
RF-amp.
EQ characteristics ^*
G_EQ1 V_CC = 3 V
f = 500 kHz, 1.5 MHz
− 0.8 1.0 2.9 dB
RF-amp. capable drive current
RF detection
I_RFO V_CC = 3 V
220   µA
RFDET det. operation
RFDET high-level
RFDET low-level
BDO
V_NRF
V_NRF-H
V_NRF-L
V_CC = 3 V, f = 500 kHz
V_CC = 3 V, f = 500 kHz
V_CC = 3 V, f = 500 kHz
88 132 176 mV[p-p]
2.6  
V
  0.4 V
BDO detection level
BDO high-level
BDO low-level
OFTR
V_BDO V_CC = 3 V
V_BDO-H f = 5 kHz, 170 mV[p-p], V_CC = 3 V
V_BDO-L f = 5 kHz, 170 mV[p-p], V_CC = 3 V
−63 −37 −11 mV
2.6  
V
  0.4 V
OFTR detection current
OFTR high-level
OFTR low-level
LD APC
I_CSOFTR V_CC = 3 V
1.03 1.45 1.87 µA
V_OFT-H V_CC = 3 V, f = 5 kHz, 700 mV[p-p]
2.6 

V
V_OFT-L V_CC = 3 V, f = 5 kHz, 700 mV[p-p]
  0.4
V
APC operating voltage
3TENV
V_APC V_CC = 3 V
147 170 193 mV
ENV-amp. offset voltage
CEA-ENV
transfer characteristics
V_ENV-OF V_CC = 3 V
G_CENV V_CC = 3 V
−125 0 125 mV
6 7.6 9.2 times
CEA input impedance
ENV output impedance
ENV amp. operation
Focus error amp.
Z_CEA V_CC = 3 V
8.1
Z_ENV V_CC = 3 V
8.1
V_OP-ENV V_CC = 3 V, f = 800 kHz, AM modulation 70
10.5 12.9 kΩ
10.5 12.9 kΩ
100 130 mV[p-p]
Focus error amp.
dead zone width 1
Focus error amp.
dead zone width 2
Focus error amp.
relative dead zone width
X_FEDZ1 V_CC = 3 V
V_FB = V_REF
X_FEDZ2 V_CC = 3 V
V_FB = V_REF
∆X_FEDZ1 V_CC = 3 V
V_FB = V_REF
−10 0 10 mV
−10 0 10 mV
−8 0
8 mV
Note) _*: The values mentioned above are subject to change according to the state of a printed circuit board, a socket, etc.
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