AN8837SB Datasheet, PDF (5/7 Pages) Panasonic Semiconductor – Low power consumption CD-DA head amplifier IC for 3-beam system optical pick-up

ICs for Compact Disc/CD-ROM Player
AN8837SB
s Electrical Characteristics at T_a = 25°C (continude)
Parameter
Symbol
Conditions
CROSS detection
CROSS high-level output
CROSS low-level output
CROSS comparator
hysteresis 1
V_CR-H
V_CR-L
∆V_HiS1
V_CC = 3 V, V_TB = V_REF , f = 10 kHz
V_CC = 3 V, V_TB = V_REF , f = 10 kHz
V_CC = 3 V
CROSS comparator
hysteresis 2
∆V_HiS2 V_CC = 3 V
RF amplification
RF amp. offset voltage
V_RF-OF V_CC = 3 V
Min Typ Max Unit
2.6  
V
  0.4 V
35 50 65 mV
−57 −42 −27 mV
−910 −710 −510 mV
RF amp. transfer gain
RF amp. relative transfer gain
RF amp.
frequency characteristics ^*
G_RF
∆G_RF
G_RFF
V_CC = 3 V
V_CC = 3 V
V_CC = 3 V
f = 500 kHz, 3 MHz
7.7 9.3 10.9 dB
− 0.8 0 0.8 dB
−3.7 −1.5 0.7 dB
RF amp. relative
frequency characteristics ^*
∆G_RFF V_CC = 3 V
f = 500 kHz, 3 MHz
−1.0 0 1.0 dB
RF amp.
EQ characteristics 1 ^*
G_EQ1 V_CC = 3 V
f = 500 kHz, 1.5 MHz
0.5 1.7 3.6 dB
RF amp.
EQ characteristics 2 ^*
G_EQ2 V_CC = 3 V
f = 100 kHz, 500 kHz
−3.5 −2.0 − 0.5 dB
RF detection
RFDET detection operation
RFDET high-level
RFDET low-level
BDO
V_NRF
V_NRF-H
V_NRF-L
V_CC = 3 V, f = 500 kHz
V_CC = 3 V, f = 500 kHz
V_CC = 3 V, f = 500 kHz
88 132 176 mV[p-p]
2.6  
V
  0.4 V
BDO detection level
BDO high-level
BDO low-level
OFTR
V_BDO V_CC = 3 V
V_BDO-H f = 5 kHz, 170 mV[p-p], V_CC = 3 V
V_BDO-L f = 5 kHz, 170 mV[p-p], V_CC = 3 V
−70 −44 −18 mV
2.6  
V
  0.4 V
OFTR detection current
OFTR high-level
OFTR low-level
LD APC
G_FAGC1 V_CC = 3 V
1.03 1.45 1.87 µA
V_OFT-H V_CC = 3 V, f = 5 kHz, 700 mV[p-p]
2.6 

V
V_OFT-L V_CC = 3 V, f = 5 kHz, 700 mV[p-p]
  0.4
V
APC operating voltage
V_APC V_CC = 3 V
147 170 193 mV
Note) _*: The values mentioned above are subject to change according to the state of a printed circuit board, a socket, etc.
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