XP4683 Datasheet, PDF (4/5 Pages) Panasonic Semiconductor – NPN(PNP) epitaxial planer transistor

Composite Transistors
Z_rb — I_E
120
VCB=6V
f=2MHz
Ta=25˚C
100
80
60
40
20
0
–0.1 –0.3
–1
–3
–10
Emitter current IE (mA)
C_re — V_CE
2.4
IC=1mA
f=10.7MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
0.1 0.3 1 3 10 30 100
Collector to emitter voltage VCE (V)
XP4683
C_ob — V_CB
1.2
f=1MHz
IE=0
Ta=25˚C
1.0
0.8
0.6
0.4
0.2
0
0 5 10 15 20 25 30
Collector to base voltage VCB (V)
P_G — I_E
40
f=100MHz
Rg=50Ω
35
Ta=25˚C
30
VCE=10V
25
6V
20
15
10
5
0
–0.1 –0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
NF — I_E
12
f=100MHz
Rg=50Ω
Ta=25˚C
10
8
6
4
VCE=6V, 10V
2
0
–0.1 –0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
Characteristics charts of Tr2
I_C — V_CE
–60
Ta=25˚C
IB=–300µA
–50
–250µA
–40
–200µA
–30
–150µA
–20
–100µA
–10
–50µA
0
0 –2 –4 –6 –8 –10 –12 –14 –16 –18
Collector to emitter voltage VCE (V)
I_C — I_B
–60
VCE=–5V
Ta=25˚C
–50
–40
–30
–20
–10
0
0
–100 –200 –300 –400
Base current IB (µA)
– 400
– 350
I_B — V_BE
VCE=–5V
Ta=25˚C
– 300
–250
–200
–150
–100
–50
0
0
–0.4 –0.8 –1.2 –1.6
Base to emitter voltage VBE (V)
4