XP03389 Datasheet, PDF (4/5 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

XP03389
Characteristics charts of Tr2
I_C  V_CE
−120
Ta = 25°C
IB = −1.0 mA
−100
−80
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
−60
− 0.5 mA
− 0.4 mA
−40
− 0.3 mA
−20
− 0.2 mA
0
0 −1 −2 −3 −4 −5 −6
Collector-emitter voltage V_CE (V)
1 000
C_ob  V_CB
f = 1 MHz
Ta = 25°C
100
10
−10
−1
− 0.1
− 0.01
V_CE(sat)  I_C
IC / IB = 10
Ta = 75°C
25°C
−25°C
− 0.001
−1
−10
−100
−1 000
Collector current I_C (mA)
h_FE  I_C
200
Ta = 75°C ^VCE ^{= −10 V}
160
25°C
120
−25°C
80
40
0
−1
−10
−100
−1 000
Collector current I_C (mA)
I_O  V_IN
−100 _{VO = − 0.2 V}
Ta = 25°C
−10
−1
−100
−10
−1
− 0.1
V_IN  I_O
VO = −5 V
Ta = 25°C
1
0
−10
−20
−30
−40
Collector-base voltage V_CB (V)
− 0.1
0
− 0.2 − 0.4 − 0.6 − 0.8 −1.0
Input voltage V_IN (V)
− 0.01
−1
−10
−100
−1 000
Output current I_O (mA)
4
SJJ00160BED