XN4482 Datasheet, PDF (4/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

Composite Transistors
Characteristics charts of Tr2
– 800
– 700
– 600
– 500
– 400
– 300
– 200
I_C — V_CE
Ta=25˚C
IB= –10mA
– 9mA
– 8mA
– 7mA
– 6mA
– 5mA
– 4mA
– 3mA
– 2mA
–1mA
–100
0
0
–4 –8 –12 –16 –20
Collector to emitter voltage VCE (V)
– 800
– 700
I_C — I_B
VCE= –10V
Ta=25˚C
– 600
– 500
– 400
– 300
– 200
–100
0
0
–2 –4 –6 –8 –10
Base current IB (mA)
XN4482
V_CE(sat) — I_C
–10
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Ta=75˚C
25˚C
–25˚C
–0.003
–0.001
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
–100
– 30
–10
V_BE(sat) — I_C
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta= – 25˚C
75˚C
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
h_FE — I_C
300
VCE= –10V
250
200
Ta=75˚C
25˚C
150
– 25˚C
100
50
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
f_T — I_E
240
VCB=–10V
Ta=25˚C
200
160
120
80
40
0
1 2 3 5 10 20 30 50 100
Emitter current IE (mA)
C_ob — V_CB
24
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
4
0
–1 –2 –3 –5 –10 –20 –30 –50 –100
Collector to base voltage VCB (V)
4