UP03312 Datasheet, PDF (4/5 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2)

UP03312
Characteristics charts of Tr2
−140
I_C  V_CE
Ta = 25°C IB = −1.0 mA
−120 ^{− 0.9 mA}
−100
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
−80
− 0.4 mA
−60
− 0.3 mA
−40
− 0.2 mA
−20
− 0.1 mA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage V_CE (V)
V_CE(sat)  I_C
−10
−1
− 0.1
T_a = 85°C
25°C
−25°C
− 0.01
− 0.1
I_C / I_B = 10
−1
−10
−100
Collector current I_C (mA)
h_FE  I_C
250
VCE = −10 V
Ta = 85°C
200
25°C
150
−25°C
100
50
0
− 0.1 −1
−10 −100 −1 000
Collector current I_C (mA)
C_ob  V_CB
10
f = 1 MHz
T_a = 25°C
I_O  V_IN
−10 _{VO = −5 V}
T_a = 25°C
V_IN  I_O
−100 _{VO = − 0.2 V}
T_a = 25°C
−1
−10
− 0.1
−1
1
0
−10
−20
−30
−40
Collector-base voltage V_CB (V)
− 0.01
− 0.5 −1.0
−1.5
−2.0 −2.5
Input voltage VIN (V)
− 0.1
− 0.1
−1
−10
−100
Output current I_O (mA)
4
SJJ00299AED