English
Language : 

UNR911XJ Datasheet, PDF (4/19 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type
◁
UNR911xJ Series
Cob  VCB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−10 −1
−1
−10
−102
Collecto-base voltage VCB (V)
IO  VIN
VIN  IO
−104
VTaO==2−55°CV
−102
VO = − 0.2 V
Ta = 25°C
−103
−10
−102
−1
−10
−10 −1
−1
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4
Input voltage VIN (V)
−10 −2
−10 −1
−1
−10
−102
Output current IO (mA)
Characteristics charts of UNR9111J
−160
−120
−80
−40
IC  VCE
IB = −1.0 mA Ta = 25°C
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage VCE (V)
VCE(sat)  IC
−102
IC / IB = 10
−10
−1
−10 −1
25°C
−25°C
Ta = 75°C
−10 −2
−10 −1
−1
−10
−102
Collector current IC (mA)
hFE  IC
160
VCE = −10 V
Ta = 75°C
25°C
120
−25°C
80
40
0
−1
−10
−102
−103
Collector current IC (mA)
Cob  VCB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−10 −1
−1
−10
−102
Collector-base voltage VCB (V)
IO  VIN
VIN  IO
−104
VO = −5 V
Ta = 25°C
−102
VO = − 0.2 V
Ta = 25°C
−103
−10
−102
−1
−10
−10 −1
−1
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4
Input voltage VIN (V)
−10 −2
−10 −1
−1
−10
−102
Output current IO (mA)
4
SJH00038BED
 ▷