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FG694301 Datasheet, PDF (4/7 Pages) Panasonic Semiconductor – Silicon N-channel MOS FET
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FG694301
This product complies with the RoHS Directive (EU 2002/95/EC).
FG694301(FET1)_Ciss , Crss , Coss -VDS
Ciss , Crss , Coss  VDS
25
Ta = 25°C
20
15
Ciss
FG694301(FET1)_|Yfs|-ID
Yfs  ID
1
Ta = 25°C
VDS = 3 V
10−1
10
Coss
5
Crss
10−2
0
0
5
10
15
20
Drain-source voltage VDS (V)
10−3
1
10
102
103
Drain current ID (mA)
CharacteristicFsGc6h9a4r3t0s1o(FfEFTE2T)_2ID-VDS
ID  VDS
−100
Ta = 25°C
−80
VGS = −4.5 V
−2.5 V
−60
−40
−20
−1.5 V
0
0 − 0.1 − 0.2 − 0.3 − 0.4 − 0.5
Drain-source voltage VDS (V)
FG694301(FET2)_ RDS(on)-ID
RDS(on)  ID
102
Ta = 25°C
FG694301(FET2)_ ID-VGS
ID  VGS
−102
VDS = −3 V
−10
Ta = 85°C
−1
−10−1
25°C
−10−2
−30°C
−10−3
0
− 0.5 −1.0 −1.5 −2.0
Gate-source voltage VGS (V)
FG694301(FET2)_ RDS(on)-VGS
RDS(on)  VGS
103
Ta = 25°C
ID = − 0.01 A
102
10
1
0 −2 −4 −6 −8 −10
Gate-source voltage VGS (V)
10
VGS = −2.5 V
−4.0 V
1
10−1
−10−1
−1
−10
−102
Drain current ID (mA)
4
Ver. AED
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