ERZ-VGAD471 Datasheet, PDF (20/20 Pages) Panasonic Semiconductor – “ZNR” Transient/Surge Absorbers (Type D)

“ZNR” Transient/Surge Absorbers (Type D)
■ Typical Characteristics
Voltage vs. Current
Impulse Derating (Relation between impulse
width and impulse current multiple)
ERZV20D820 to ERZV20D511
2000
1000
900
800
700
600
500
400
300
.BY
-FBLBHF
$VSSFOU
471
431
391
361
511
.BY
$MBNQJOH
7PMUBHF
ERZV20D820 to ERZV20D511
10000
2 times : 5 min. interval
up to 10 times : 2 min. interval
511
up to 10⁶ times :10 sec. interval
471
431
391
361
331
271
241
221
201
151
1000
100
101₆^{01T50iT1m4i0mTe1i3mse0Tsi12emT0siemT2siemTsiemses}
121
101
10
820
200
271
210511
100
90
121
80
101
70
60
820
50
241
331
40
221
30
10^-6
10^-5
10^-4
10^-3
10^-2
ERZV20D561 to ERZV20D182
5000
4000
.BY
-FBLBHF
$VSSFOU
10^-1 10⁰
Current (A)
Test Current Waveform
10^-6 to 10^-3 A: Direct Current
10^-1 to 10⁴ A: 8/20 µs
10¹
10²
10³
10⁴
10⁵
.BY
$MBNQJOH
7PMUBHF
182
1
20
100
1000
10000
Impulse Width (µs)
ERZV20D561 to ERZV20D112
10000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 10⁶ times :10 sec. interval
1000
100
101₆^{01T50iT1m40imeT13is0emT1si2me0Ts2ieTmsTimeimseess}
10
3000
102
911
821
2000
182
112
102
1
20
100
1000
10000
911
Impulse Width (µs)
821
751
681
621
561
ERZV20D182
10000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 10⁶ times :10 sec. interval
1000
900
800
700
600
500
400
300
112
561
751
681
621
Test Current Waveform
10^-6 to 10^-3 A: Direct Current
10^-1 to 10⁴ A: 8/20 µs
1000
100
1010₅^1T04_iTm^{31iTm0eim21esT0seimsT2iemTsimeses}
10 _{6 Times}
10
200
10^-6
10^-5 10^-4 10^-3
10^-2
10^-1
10⁰
10¹
Current (A)
10² 10³
10⁴ 10⁵
1
20
100
1000
10000
Impulse Width (µs)
Design and specifications are each subject to change without notice. Ask factory for the current technical specifications before purchase and/or use.
Should a safety concern arise regarding this product, please be sure to contact us immediately.
01 Aug. 2012
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