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XP6501 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor | |||
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Composite Transistors
PT â Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (ËC)
IC â VBE
240
VCE=10V
200
160
120
25ËC
Ta=75ËC
80
â 25ËC
40
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
hFE â IC
600
VCE=10V
500
400
Ta=75ËC
25ËC
300
â 25ËC
200
100
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
IC â VCE
60
Ta=25ËC
IB=160µA
50
140µA
40
120µA
100µA
30
80µA
20
60µA
40µA
10
20µA
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
XP6501
1200
1000
IB â VBE
VCE=10V
Ta=25ËC
800
600
400
200
0
0
0.2 0.4 0.6 0.8 1.0
Base to emitter voltage VBE (V)
240
VCE=10V
Ta=25ËC
200
IC â IB
160
120
80
40
0
0 200 400 600 800 1000
Base current IB (µA)
VCE(sat) â IC
100
IC/IB=10
30
10
3
1
0.3
0.1
25ËC
Ta=75ËC
0.03
â 25ËC
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
fT â IE
300
VCB=10V
Ta=25ËC
240
180
120
60
0
â0.1 â0.3 â1 â3 â10 â30 â100
Emitter current IE (mA)
NV â IC
240
VCE=10V
GV=80dB
200 Function=FLAT
Ta=25ËC
160
120
Rg=100kâ¦
80
22kâ¦
40
4.7kâ¦
0
10 20 30 50 100 200 300 500 1000
Collector current IC (µA)
2
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