XP6435 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

Composite Transistors
P_T — Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
h_FE — I_C
120
VCE= –10V
100
Ta=75˚C
80
25˚C
60
– 25˚C
40
20
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
f_T — I_E
600
VCB=–10V
Ta=25˚C
500
400
300
200
100
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
I_C — V_CE
–30
Ta=25˚C
–25
–20
IB= – 250µA
– 200µA
–15
–150µA
–10
–100µA
–5
– 50µA
0
0
–2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
XP6435
–100
–30
–10
V_CE(sat) — I_C
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
– 25˚C
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
C_ob — V_CB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
C_re — V_CE
5
IC= –1mA
f=10.7MHz
Ta=25˚C
4
3
2
1
0
–1 –2 –3 –5 –10 –20 –30 –50 –100
Collector to emitter voltage VCE (V)
PG — I_C
24
VCE= –10V
f=100MHz
Ta=25˚C
20
16
12
8
4
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
NF — I_E
5
VCB=–10V
f=100MHz
Ta=25˚C
4
3
2
1
0
0.1 0.2 0.3 0.5 1
2 3 5 10
Emitter current IE (mA)
2