XP5501 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
P_T — Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
I_C — V_BE
240
VCE=10V
200
160
120
25˚C
Ta=75˚C
80
– 25˚C
40
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
h_FE — I_C
600
VCE=10V
500
400
Ta=75˚C
25˚C
300
– 25˚C
200
100
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
I_C — V_CE
60
Ta=25˚C
IB=160µA
50
140µA
40
120µA
100µA
30
80µA
20
60µA
40µA
10
20µA
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
XP5501
1200
1000
I_B — V_BE
VCE=10V
Ta=25˚C
800
600
400
200
0
0
0.2 0.4 0.6 0.8 1.0
Base to emitter voltage VBE (V)
I_C — I_B
240
VCE=10V
Ta=25˚C
200
160
120
80
40
0
0 200 400 600 800 1000
Base current IB (µA)
V_CE(sat) — I_C
100
IC/IB=10
30
10
3
1
0.3
0.1
25˚C
Ta=75˚C
0.03
– 25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
f_T — I_E
300
VCB=10V
Ta=25˚C
240
180
120
60
0
–0.1 –0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
NV — I_C
240
VCE=10V
GV=80dB
200 ^{Function=FLAT}
Ta=25˚C
160
120
Rg=100kΩ
80
22kΩ
40
4.7kΩ
0
10 20 30 50 100 200 300 500 1000
Collector current IC (µA)
2