XP4654 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon NPN(PNP) epitaxial planer transistor

Composite Transistors
s ^{Electrical Characteristics (Ta=25˚C)}
q Tr1
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_ob
t_on
t_off
t_stg
Conditions
min
V_CB = 40V, I_E = 0
V_EB = 4V, I_C = 0
V_CE = 1V, I_C = 10mA
60
I_C = 10mA, I_B = 1mA
I_C = 10mA, I_B = 1mA
V_CB = 10V, I_E = –10mA, f = 200MHz
V_CB = 10V, I_E = 0, f = 1MHz
*1
XP4654
typ max Unit
0.1
µA
0.1
µA
320
0.17 0.25
V
1.0
V
450
MHz
2
6
pF
17
ns
17
ns
10
ns
q Tr2
Parameter
Symbol
Collector cutoff current
I_CBO
Emitter cutoff current
I_EBO
h_FE1
Forward current transfer ratio
h_FE2
Collector to emitter saturation voltage V_CE(sat)
Transition frequency
f_T
Collector output capacitance
C_ob
Turn-on time
t_on
Turn-off time
t_off
Storage time
t_stg
*1 _{Refer to the test circuit (page 459)}
*2 _{Refer to the test circuit (page 460)}
Conditions
min
V_CB = –8V, I_E = 0
V_EB = –3V, I_C = 0
V_CE = –1V, I_C = –10mA
50
V_CE = –1V, I_C = –1mA
30
I_C = –10mA, I_B = –1mA
V_CB = –10V, I_E = 10mA, f = 200MHz 800
V_CB = –5V, I_E = 0, f = 1MHz
*2
typ max Unit
– 0.1 µA
– 0.1 µA
150
– 0.1
1500
1
12
20
19
– 0.2
V
MHz
pF
ns
ns
ns
Common characteristics chart
P_T — Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
2