XP4314 Datasheet, PDF (2/5 Pages) Panasonic Semiconductor – Silicon NPN(PNP) epitaxial planer transistor

XP04314
■ Electrical Characteristics T_a = 25°C ± 3°C
• Tr1
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 10 µA, I_E = 0
50
Collector-emitter voltage (Base open) V_CEO I_C = 2 mA, I_B = 0
50
Collector-base cutoff current (Emitter open) I_CBO V_CB = 50 V, I_E = 0
0.1
Collector-emitter cutoff current (Base open) I_CEO V_CE = 50 V, I_B = 0
0.5
Emitter-base cutoff current (Collector open) I_EBO V_EB = 6 V, I_C = 0
0.2
Forward current transfer ratio
h_FE V_CE = 10 V, I_C = 5 mA
80
Collector-emitter saturation voltage
V_CE(sat) I_C = 10 mA, I_B = 0.3 mA
0.25
Output voltage high-level
V_OH V_CC = 5 V, V_B = 0.5 V, R_L = 1 kΩ
4.9
Output voltage low-level
V_OL V_CC = 5 V, V_B = 2.5 V, R_L = 1 kΩ
0.2
Input resistance
R₁
−30% 10 +30%
Resistance ratio
R₁ / R₂
0.17 0.21 0.25
Transition frequency
f_T
V_CB = 10 V, I_E = −2 mA, f = 200 MHz
150
V
V
µA
µA
mA

V
V
V
kΩ

MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
• Tr2
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_OH
V_OL
R₁
R₁ / R₂
f_T
I_C = −10 µA, I_E = 0
I_C = −2 mA, I_B = 0
V_CB = −50 V, I_E = 0
V_CE = −50 V, I_B = 0
V_EB = −6 V, I_C = 0
V_CE = −10 V, I_C = −5 mA
I_C = −10 mA, I_B = − 0.3 mA
V_CC = −5 V, V_B = − 0.5 V, R_L = 1 kΩ
V_CC = −5 V, V_B = −2.5 V, R_L = 1 kΩ
−50
−50
80
−4.9
−30%
0.17
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
− 0.1
− 0.5
− 0.2
− 0.25
− 0.2
10 +30%
0.21 0.25
80
V
V
µA
µA
mA

V
V
V
kΩ

MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P_T  T_a
250
200
150
100
50
0
0
40
80
120
160
Ambient temperature T_a (°C)
2
SJJ00179BED