XP4111 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

Composite Transistors
P_T — Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
XP4111
I_C — V_CE
–160
–140
–120
Ta=25˚C
IB= –1.0mA
– 0.9mA
– 0.8mA
–100
– 80
– 60
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 40
– 0.2mA
– 20
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
V_CE(sat) — I_C
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
25˚C
– 25˚C
Ta=75˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
h_FE — I_C
160
VCE= –10V
Ta=75˚C
25˚C
120
– 25˚C
80
40
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
C_ob — V_CB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
–3000
–1000
I_O — V_IN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
–0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Input voltage VIN (V)
–100
– 30
–10
V_IN — I_O
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
2