XP06401 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

XP06401
P_T  T_a
250
200
150
100
50
0
0
40
80
120
160
Ambient temperature T_a (°C)
I_C  V_CE
−60
Ta = 25°C
−50
IB = − 300 µA
−250 µA
−40
−200 µA
−30
−150 µA
−20
−100 µA
−10
−50 µA
0
0
−4
−8 −12 −16
Collector-emitter voltage V_CE (V)
I_C  I_B
−60
VCE = −5 V
Ta = 25°C
−50
−40
−30
−20
−10
0
0
−100 −200 −300 −400
Base current I_B (µA)
−400
−350
I_B  V_BE
V_CE = −5 V
T_a = 25°C
−300
−250
−200
−150
−100
−50
0
0
−0.4 −0.8 −1.2 −1.6
Base-emitter voltage V_BE (V)
−240
−200
−160
I_C  V_BE
VCE = −5 V
25°C
Ta = 75°C −25°C
−120
−80
−40
0
0 −0.4 −0.8 −1.2 −1.6 −2.0
Base-emitter voltage V_BE (V)
−10
−1
−10^−1
V_CE(sat)  I_C
IC / IB = 10
25°C ^{Ta = 75°C}
−25°C
−10^−2
−10^−3
−1
−10
−10²
−10³
Collector current I_C (mA)
h_FE  I_C
600
V_CE = –10 V
500
400
T_a = 75°C
300 25°C
−25°C
200
100
0
−1
−10
−10²
−10³
Collector current I_C (mA)
f_T  I_E
160
V_CB = −10 V
T_a = 25°C
140
120
100
80
60
40
20
0
10^−1
1
10
10²
Emitter current I_E (mA)
C_ob  V_CB
8
f = 1 MHz
7
IE = 0
Ta = 25°C
6
5
4
3
2
1
0
−1
−10
−10²
Collector-base voltage V_CB (V)
2
SJJ00212BED