XP01501 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

XP01501
P_T  T_a
250
200
150
100
50
0
0
40
80
120
160
Ambient temperature T_a (°C)
I_C  V_CE
60
Ta = 25°C
IB = 160 µA
50
140 µA
40
120 µA
100 µA
30
80 µA
20
60 µA
40 µA
10
20 µA
0
0
2
4
6
8
10
Collector-emitter voltage V_CE (V)
240
VCE = 10 V
Ta = 25°C
200
I_C  I_B
160
120
80
40
0
0 0.2 0.4 0.6 0.8 1.0
Base current I_B (mA)
I_B  V_BE
1.2
VCE = 10 V
Ta = 25°C
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0
Base-emitter voltage V_BE (V)
I_C  V_BE
240
VCE = 10 V
200
160
120
25°C
Ta = 75°C
80
−25°C
40
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage V_BE (V)
V_CE(sat)  I_C
10²
IC / IB = 10
10
1
10^−1
25°C
Ta = 75°C
−25°C
10^−2
10^−1
1
10
10²
Collector current I_C (mA)
h_FE  I_C
600
V_CE = 10 V
500
400
T_a = 75°C
25°C
300
−25°C
200
100
0
10^−1
1
10
10²
Collector current I_C (mA)
f_T  I_E
300
V_CB = 10 V
T_a = 25°C
240
180
120
60
0
−10^−1
–1
–10
–10²
Emitter current I_E (mA)
NV  I_C
240
VCE = 10 V
GV = 80 dB
200 ^{Function = FLAT}
Ta = 25°C
160
120
Rg = 100 kΩ
80
22 kΩ
40
4.7 kΩ
0
10
10²
10³
Collector current I_C (µA)
2
SJJ00146BED