XP0121E Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
P_T — Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
XP0121E
I_C — V_CE
60
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
Ta=25˚C
50
40
0.3mA ^0.2mA
30
0.4mA
0.5mA
0.1mA
20
10
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
V_CE(sat) — I_C
100
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
– 25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
h_FE — I_C
160
VCE=10V
Ta=75˚C
120
25˚C
– 25˚C
80
40
0
1 3 10 30 100 300 1000
Collector current IC (mA)
C_ob — V_CB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
10000
3000
1000
I_O — V_IN
VO=5V
Ta=25˚C
300
100
30
10
3
1
1.5 2.0 2.5 3.0 3.5 4.0
Input voltage VIN (V)
V_IN — I_O
100
VO=0.2V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1 0.3 1 3 10 30 100
Output current IO (mA)
2